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| FDP5N50F / FDPF5N50FT N-Channel MOSFET, FRFET December 2007 FDP5N50F / FDPF5N50FT N-Channel MOSFET, FRFET 500V, 4.5A, 1.55 Features * RDS(on) = 1.25 ( Typ.)@ VGS = 10V, ID = 2.25A * Low gate charge ( Typ. 11nC) * Low Crss ( Typ. 5pF) * Fast switching * 100% avalanche tested * Improved dv/dt capability * RoHS compliant UniFETTM tm Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pluse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power suppliesand active power factorcorrection. D G GDS TO-220 FDP Series GD S TO-220F FDPF Series S MOSFET Maximum Ratings TC = 25oC unless otherwise noted* Symbol VDSS VGSS ID IDM EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Drain Current Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation - Derate above 25oC (TC = 25oC) -Continuous (TC = 25oC) - Pulsed 4.5 2.7 (Note 1) (Note 2) (Note 1) (Note 1) (Note 3) 85 0.67 300 -55 to +150 18 233 4.5 8.5 4.5 28 0.22 -Continuous (TC = 100oC) FDP5N50F FDPF5N50FT 500 30 4.5* 2.7* 18* Units V V A A mJ A mJ V/ns W W/oC o o Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8" from Case for 5 Seconds C C *Drain current limited by maximum junction temperature Thermal Characteristics Symbol RJC RCS RJA Parameter Thermal Resistance, Junction to Case Thermal Resistance, Case to Sink Typ. Thermal Resistance, Junction to Ambient FDP5N50F 1.4 0.5 62.5 FDPF5N50FT 4.5 62.5 o Units C/W (c)2007 Fairchild Semiconductor Corporation FDP5N50F / FDPF5N50FT Rev. A1 1 www.fairchildsemi.com FDP5N50F / FDPF5N50FT N-Channel MOSFET, FRFET Package Marking and Ordering Information TC = 25oC unless otherwise noted Device Marking FDP5N50F FDPF5N50FT Device FDP5N50F FDPF5N50FT Package TO-220 TO-220F Reel Size Tape Width Quantity 50 50 Electrical Characteristics Symbol Parameter Test Conditions Min. Typ. Max. Units Off Characteristics BVDSS BVDSS TJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Body Leakage Current ID = 250A, VGS = 0V, TJ = 25oC ID = 250A, Referenced to 25oC VDS = 400V, TC = 125oC VGS = 30V, VDS = 0V VDS = 500V, VGS = 0V 500 0.6 10 100 100 V V/oC A nA On Characteristics VGS(th) RDS(on) gFS Gate Threshold Voltage Static Drain to Source On Resistance Forward Transconductance VGS = VDS, ID = 250A VGS = 10V, ID = 2.25A VDS = 20V, ID = 2.25A (Note 4) 3.0 - 1.25 4.3 5.0 1.55 - V S Dynamic Characteristics Ciss Coss Crss Qg(tot) Qgs Qgd Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge at 10V Gate to Source Gate Charge Gate to Drain "Miller" Charge VDS = 400V, ID = 5A VGS = 10V VDS = 25V, VGS = 0V f = 1MHz (Note 4, 5) 490 66 5 11 3 5 650 88 7.5 15 - pF pF pF nC nC nC - Switching Characteristics td(on) tr td(off) tf Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time VDD = 250V, ID = 5A RG = 25 (Note 4, 5) - 13 22 28 20 36 54 66 50 ns ns ns ns Drain-Source Diode Characteristics IS ISM VSD trr Qrr Maximum Continuous Drain to Source Diode Forward Current Maximum Pulsed Drain to Source Diode Forward Current Drain to Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0V, ISD = 4.5A VGS = 0V, ISD = 5A dIF/dt = 100A/s (Note 4) - 65 0.120 4.5 18 1.5 - A A V ns C Notes: 1: Repetitive Rating: Pulse width limited by maximum junction temperature 2: L =23 mH, IAS = 4.5A, VDD = 50V, RG = 25, Starting TJ = 25C 3: ISD 4.5A, di/dt 200A/s, VDD BVDSS, Starting TJ = 25C 4: Pulse Test: Pulse width 300s, Duty Cycle 2% 5: Essentially Independent of Operating Temperature Typical Characteristics FDP5N50F / FDPF5N50FT Rev. A1 2 www.fairchildsemi.com FDP5N50F / FDPF5N50FT N-Channel MOSFET, FRFET Typical Performance Characteristics Figure 1. On-Region Characteristics 10 VGS = 15.0V 10.0V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V Figure 2. Transfer Characteristics 20 10 ID,Drain Current[A] ID,Drain Current[A] 1 150 C 25 C o o 1 0.1 0.04 0.1 *Notes: 1. 250s Pulse Test 2. TC = 25 C o 1 VDS,Drain-Source Voltage[V] 10 0.1 *Notes: 1. VDS = 20V 2. 250s Pulse Test 4 5 6 7 VGS,Gate-Source Voltage[V] 8 Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 2.2 Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature 50 RDS(ON) [], Drain-Source On-Resistance IS, Reverse Drain Current [A] 2.0 10 150 C 25 C o o 1.8 VGS = 10V 1.6 VGS = 20V 1 *Notes: 1. VGS = 0V 1.4 *Note: TJ = 25 C o 1.2 0 4 8 12 ID, Drain Current [A] 16 20 0.2 0.0 2. 250s Pulse Test 0.4 0.8 1.2 VSD, Body Diode Forward Voltage [V] 1.6 Figure 5. Capacitance Characteristics 1000 VGS, Gate-Source Voltage [V] Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd Figure 6. Gate Charge Characteristics 10 VDS = 100V VDS = 250V VDS = 400V 750 Capacitances [pF] 8 Ciss *Note: 1. VGS = 0V 2. f = 1MHz 6 500 Coss 4 250 Crss 2 *Note: ID = 5A 0 0.1 1 10 VDS, Drain-Source Voltage [V] 30 0 0 3 6 9 Qg, Total Gate Charge [nC] 12 FDP5N50F / FDPF5N50FT Rev. A1 3 www.fairchildsemi.com FDP5N50F / FDPF5N50FT N-Channel MOSFET, FRFET Typical Performance Characteristics (Continued) Figure 7. Breakdown Voltage Variation vs. Temperature 1.2 Figure 8. Maximum Safe Operating Area - FDP5N50F 30 30s 100s 1ms 10ms DC BVDSS, [Normalized] Drain-Source Breakdown Voltage 10 ID, Drain Current [A] 1.1 1 Operation in This Area is Limited by R DS(on) 1.0 0.9 *Notes: 1. VGS = 0V 2. ID = 250A 0.1 *Notes: 1. TC = 25 C 2. TJ = 150 C 3. Single Pulse o o 0.8 -75 -25 25 75 125 o TJ, Junction Temperature [ C] 175 0.01 1 10 100 VDS, Drain-Source Voltage [V] 1000 Figure 9. Maximum Safe Operating Area - FDPF5N50FT 30 30s 100s 1ms 10ms Figure 10. Maximum Drain Current 5 10 ID, Drain Current [A] 4 ID, Drain Current [A] 1 DC Operation in This Area is Limited by R DS(on) 2 0.1 *Notes: 1. TC = 25 C 2. TJ = 150 C 3. Single Pulse o o 0.01 1 10 100 VDS, Drain-Source Voltage [V] 1000 0 25 50 75 100 125 o TC, Case Temperature [ C] 150 Figure 11. Transient Thermal Response Curve - FDP5N50F 3 Thermal Response [ZJC] 1 0.5 0.2 0.1 0.1 0.05 0.02 0.01 PDM t1 t2 o *Notes: 0.01 Single pulse 0.003 -5 10 1. ZJC(t) = 1.4 C/W Max. 2. Duty Factor, D= t1/t2 3. TJM - TC = PDM * ZJC(t) 10 -4 10 10 10 10 Rectangular Pulse Duration [sec] -3 -2 -1 0 10 1 10 2 FDP5N50F / FDPF5N50FT Rev. A1 4 www.fairchildsemi.com FDP5N50F / FDPF5N50FT N-Channel MOSFET, FRFET Typical Performance Characteristics (Continued) Figure 12. Transient Thermal Response Curve - FDPF5N50FT 10 Thermal Response [ZJC] 0.5 1 0.2 0.1 0.05 PDM t1 t2 o 0.1 0.02 0.01 *Notes: 1. ZJC(t) = 4.5 C/W Max. 2. Duty Factor, D= t1/t2 3. TJM - TC = PDM * ZJC(t) -4 0.01 Single pulse 0.005 -5 10 10 10 -3 10 10 10 10 Rectangular Pulse Duration [sec] -2 -1 0 1 10 2 10 3 FDP5N50F / FDPF5N50FT Rev. A1 5 www.fairchildsemi.com FDP5N50F / FDPF5N50FT N-Channel MOSFET, FRFET Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms FDP5N50F / FDPF5N50FT Rev. A1 6 www.fairchildsemi.com FDP5N50F / FDPF5N50FT N-Channel MOSFET, FRFET Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + V DS _ I SD L D r iv e r R G S am e T ype as DUT V DD V GS * d v / d t c o n t r o lle d b y R G * I S D c o n t r o lle d b y p u ls e p e r io d V GS ( D r iv e r ) G a t e P u ls e W id th D = -------------------------G a te P u ls e P e r io d 10V I F M , B o d y D io d e F o r w a r d C u r r e n t I SD (DUT ) IR M d i/ d t B o d y D io d e R e v e r s e C u r r e n t V DS (DUT ) B o d y D io d e R e c o v e r y d v / d t V SD V DD B o d y D io d e F o r w a r d V o lt a g e D r o p FDP5N50F / FDPF5N50FT Rev. A1 7 www.fairchildsemi.com FDP5N50F / FDPF5N50FT N-Channel MOSFET, FRFET Mechanical Dimensions TO-220 FDP5N50F / FDPF5N50FT Rev. A1 8 www.fairchildsemi.com FDP5N50F / FDPF5N50FT N-Channel MOSFET, FRFET Mechanical Dimensions TO-220F 3.30 0.10 10.16 0.20 (7.00) o3.18 0.10 2.54 0.20 (0.70) 6.68 0.20 15.80 0.20 (1.00x45) 9.75 0.30 MAX1.47 0.80 0.10 (3 ) 0 0.35 0.10 2.54TYP [2.54 0.20] #1 0.50 -0.05 2.54TYP [2.54 0.20] 4.70 0.20 +0.10 2.76 0.20 9.40 0.20 Dimensions in Millimeters 15.87 0.20 www.fairchildsemi.com FDP5N50F / FDPF5N50FT Rev. A1 9 FDP5N50F / FDPF5N50FT N-Channel MOSFET, FRFET TRADEMARKS The following are registered and unregistered trademarks and service marks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx(R) Build it NowTM CorePLUSTM CROSSVOLTTM CTLTM Current Transfer LogicTM EcoSPARK(R) EZSWITCHTM * TM (R) Fairchild(R) Fairchild Semiconductor(R) FACT Quiet SeriesTM FACT(R) FAST(R) FastvCoreTM FlashWriter(R) * tm FPSTM FRFET(R) Global Power ResourceSM Green FPSTM Green FPSTM e-SeriesTM GTOTM i-LoTM IntelliMAXTM ISOPLANARTM MegaBuckTM MICROCOUPLERTM MicroFETTM MicroPakTM MillerDriveTM Motion-SPMTM OPTOLOGIC(R) OPTOPLANAR(R) (R) tm PDP-SPMTM Power220(R) Power247(R) POWEREDGE(R) Power-SPMTM PowerTrench(R) Programmable Active DroopTM QFET(R) QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM SMART STARTTM SPM(R) STEALTHTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM (R) The Power Franchise(R) tm TinyBoostTM TinyBuckTM TinyLogic(R) TINYOPTOTM TinyPowerTM TinyPWMTM TinyWireTM SerDesTM UHC(R) Ultra FRFETTM UniFETTM VCXTM * EZSWITCHTM and FlashWriter(R) are trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD'S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I32 Preliminary First Production No Identification Needed Full Production Obsolete Not In Production FDP5N50F / FDPF5N50FT Rev. A1 10 www.fairchildsemi.com |
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